sm6t series vishay semiconductors formerly general semiconductor document number 88385 www.vishay.com 03-may-02 1 new product surface mount t rans z orb transient voltage suppressors breakdown voltage 6.8 to 220v peak pulse power 600w maximum ratings & thermal characteristics ratings at 25? ambient temperature unless otherwise specified. parameter symbol value unit peak pulse power dissipation on p ppm minimum 600 w 10/1000 s waveform (1)(2) (fig. 1) peak pulse current with a 10/1000 s waveform (1) i ppm see next table a power dissipation on infinite heatsink, t a = 50? p m(av) 5.0 w peak forward surge current 10ms single half sine-wave i fsm 100 a uni-directional only (2) thermal resistance junction to ambient air (3) r ja 100 ?/w thermal resistance junction to leads r jl 20 ?/w operating junction and storage temperature range t j , t stg 65 to +150 ? notes: (1) non-repetitive current pulse, per fig.3 and derated above t a = 25? per fig. 2 (2) mounted on 0.2 x 0.2 (5.0 x 5.0mm) copper pads to each terminal (3) mounted on minimum recommended pad layout 0.180 (4.57) 0.160 (4.06) 0.012 (0.305) 0.006 (0.152) 0.008 (0.203) max. 0.220 (5.59) 0.205 (5.21) 0.060 (1.52) 0.030 (0.76) 0.155 (3.94) 0.130 (3.30) 0.086 (2.20) 0.077 (1.95) 0.096 (2.44) 0.084 (2.13) cathode band dimensions in inches and (millimeters) do-214aa (smbj) features low profile package with built-in strain relief for surface mounted applications glass passivated junction low inductance excellent clamping capability repetition rate (duty cycle): 0.01% fast response time: theoretically (with no parisitic inductance) less than 1ps from 0 volts to v (br) for unidirectional and 5ns for bidirectional types high temperature soldering: 250 c/10 seconds at terminals plastic package has underwriters laboratory flammability classificaion 94v-0 mechanical data case: jedec do-214aa (smb) molded plastic over passivated junction terminals: solder plated, solderable per mil-std-750, method 2026 polarity: for uni-directional types the band denotes the cathode, which is positive with respect to the anode under normal tvs operation standard packaging: 12mm tape (eia std rs-481) weight: 0.003 ounces, 0.093 grams packaging codes ?options (antistatic): 51 2k per bulk box, 20k/carton 52 750 per 7 plastic reel (12mm tape), 15k/carton 5b 3.2k per 13 plastic reel (12mm tape), 32k/carton 0.106 max (2.69 max) 0.050 min (1.27 min) 0.220 ref 0.083 min (2.10 min) mounting pad layout
sm6t series vishay semiconductors formerly general semiconductor www.vishay.com document number 88385 2 03-may-02 electrical characteristics ratings at 25 c ambient temperature unless otherwise specified. device breakdown voltage test standoff leakage clamping voltage clamping voltage t marking v br @ i t (2) current voltage current (3) v c @ i pp v c @ i pp max code i t (v) v rm i rm @v rm 10/1000 s 8/20 s0 -4 / o c type (1) uni bi min max (ma) (v) ( a) (v) (a) (v) (a) sm6t6v8a ke7 ke7 6.45 7.14 10 5.80 1000 10.5 57.0 13.4 298 5.7 sm6t7v5a kk7 ak7 7.13 7.88 10 6.40 500 11.3 53.0 14.5 276 6.1 sm6t10a kt7 at7 9.50 10.5 1.0 8.55 10.0 14.5 41.0 18.6 215 7.3 sm6t12a kx7 ax7 11.4 12.6 1.0 10.2 5.0 16.7 36.0 21.7 184 7.8 sm6t15a lg7 lg7 14.3 15.8 1.0 12.8 1.0 21.2 28.0 27.2 147 8.4 sm6t18a lm7 bm7 17.1 18.9 1.0 15.3 1.0 25.2 24.0 32.5 123 8.8 sm6t22a lt7 bt7 20.9 23.1 1.0 18.8 1.0 30.6 20.0 39.3 102 9.2 sm6t24a lv7 lv7 22.8 25.2 1.0 20.5 1.0 33.2 18.0 42.8 93 9.4 sm6t27a lx7 bx7 25.7 28.4 1.0 23.1 1.0 37.5 16.0 48.3 83 9.6 sm6t30a me7 ce7 28.5 31.5 1.0 25.6 1.0 41.5 14.5 53.5 75 9.7 sm6t33a mg7 mg7 31.4 34.7 1.0 28.2 1.0 45.7 13.1 59.0 68 9.8 sm6t36a mk7 ck7 34.2 37.8 1.0 30.8 1.0 49.9 12.0 64.3 62 9.9 sm6t39a mm7 cm7 37.1 41.0 1.0 33.3 1.0 53.9 11.1 69.7 57 10.0 sm6t68a ng7 ng7 64.6 71.4 1.0 58.1 1.0 92.0 6.50 121 33 10.4 sm6t100a nv7 nv7 95.0 105 1.0 85.5 1.0 137 4.40 178 22.5 10.6 sm6t150a pk7 pk7 143 158 1.0 128 1.0 207 2.90 265 15 10.8 sm6t200a pr7 pr7 190 210 1.0 171 1.0 274 2.20 353 11.3 10.8 sm6t220a pr8 pr8 209 231 1.0 188 1.0 328 2.00 388 10.3 10.8 notes: (1) for bi-directional devices add suffix ca . (2) v br measured after i t applied for 300 s square wave pulse. (3) for bipolar devices with v r =10 volts or under, the i t limit is doubled.
sm6t series vishay semiconductors formerly general semiconductor document number 88385 www.vishay.com 03-may-02 3 ratings and characteristic curves (t a = 25 c unless otherwise noted) 0 25 50 75 100 0 75 25 50 100 125 150 175 200 peak pulse power (p pp ) or current (i pp ) derating in percentage, % t a ambient temperature ( c) fig. 2 pulse derating curve p ppm peak pulse power (kw) fig. 1 peak pulse power rating curve 0.1 1 10 100 0.1 s 1.0 s10 s t d pulse width (sec.) 100 s 1.0ms 10ms 0.2 x 0.2" (0.5 x 0.5mm) copper pad areas fig. 6 maximum non-repetitive peak forward surge current number of cycles at 60h z 10 200 100 110 100 8.3ms single half sine-wave (jedec method) unidirectional only i fsm peak forward surge current (a) t p pulse duration (sec) transient thermal impedance ( c/w) fig. 5 typical transient thermal impedance 0.1 1.0 10 100 0.001 0.01 0.1 1 10 100 1000 0 50 100 150 i ppm peak pulse current, % i rsm fig. 3 pulse waveform t j = 25 c pulse width (td) is defined as the point where the peak current decays to 50% of i ppm tr = 10 sec. peak value i ppm half value ipp i ppm 2 td 10/1000 sec. waveform as defined by r.e.a. 0 1.0 2.0 3.0 4.0 t time (ms) c j junction capacitance (pf) fig. 4 typical junction capacitance 10 100 1,000 6,000 10 1 100 200 v wm reverse stand-off voltage (v) t j = 25 c f = 1.0mhz vsig = 50mvp-p v r , measured at stand-off voltage, v wm measured at zero bias uni-directional bi-directional
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